| \? EGP30A, EG.P30B, EGP30c, EG.P30D, EG.P30F, EGP30G.7 www'ViShay'C°m Vishay General Semiconductor ELECTRICAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted) PARAMETER TEST CONDITIONS M Maximum instantaneousforward voltage Maxmumoc @ reverse Current at ratedDC blocking Voltage TA : 125 “C Maximum reverse IF : 0.5 A, IR : 1.0 A, recovew time In : 0.25 A Typical junction 4 0 V 1 MHZ Capacitance ' ’ THERMAL cHARAcTERIsTIcs (TA = 25 PARAMETER Typical thermal resistance Note (i) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted 313$N ate2 Resistive or Inductive Load TJ : TJ Max ?ne313$ en ii) AEC-Q101 qumniedRATINGS AND cHARAcTERIsTIcs cuRvEs (TA = 25 cc unless otherwise noted) 5‘) o175 2 0375.‘ ‘Q 5 mm’ Lead Length i 150 S 3 ms Single Hall Sine—Wave &’ E S 9.)0 5 125E 2-O 2 |" || :3 g 100 -g I ‘(E 75 ‘. E5 1-0 0 III I O u. so |L X 0’ too? u, I E D. 25 or >0 0 0 25 so 75 100 125 150 175 1 10 100 Ambient Temperature ("C) Number of Cycles at 60 HZ Fig. 1 — Maximum Forward Current Derating Curve Fig. 2 — Maximum Non-Repetitive Peak Forward Surge Current Revision: 15-Aug-13 2 Document Number: 88584 For technical questions within your region: DiodesArnericas@vishay.Corn, DiodesAsia@vishay.Com, DiodesEurope@Vishay.Com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishev.comzdoc?91000 |